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647543

Sigma-Aldrich

Silizium

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Synonym(e):

Silicon element

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About This Item

Lineare Formel:
Si
CAS-Nummer:
7440-21-3
Molekulargewicht:
28.09
EG-Nummer:
231-130-8
MDL-Nummer:
MFCD00085311
UNSPSC-Code:
12352300
PubChem Substanz-ID:
24883544
NACRES:
NA.23

Form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Enthält nicht

dopant

Durchm. × Dicke

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp (Schmelzpunkt)

1410 °C (lit.)

Dichte

2.33 g/mL at 25 °C (lit.)

Halbleitereigenschaften

<111>, N-type

SMILES String

[Si]

InChI

1S/Si

InChIKey

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Physikalische Eigenschaften

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity >1,000 Ω•cm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Lagerklassenschlüssel

13 - Non Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

Analysenzertifikate (COA)

Suchen Sie nach Analysenzertifikate (COA), indem Sie die Lot-/Chargennummer des Produkts eingeben. Lot- und Chargennummern sind auf dem Produktetikett hinter den Wörtern ‘Lot’ oder ‘Batch’ (Lot oder Charge) zu finden.

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Siliziumdioxid single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Siliziumdioxid

Aluminiumoxid single crystal substrate, &#60;0001&#62;

Sigma-Aldrich

634875

Aluminiumoxid

Goldbeschichtete Silizium-Wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Goldbeschichtete Silizium-Wafer

Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
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