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Sigma-Aldrich

Tris(tert-butoxy)silanol

99.999%

Synonym(e):

TBS

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About This Item

Lineare Formel:
((CH3)3CO)3SiOH
CAS-Nummer:
18166-43-3
Molekulargewicht:
264.43
MDL-Nummer:
MFCD00271024
UNSPSC-Code:
12352103
PubChem Substanz-ID:
24879332
NACRES:
NA.23

Assay

99.999%

Form

solid

bp

205-210 °C (lit.)

mp (Schmelzpunkt)

63-65 °C (lit.)

SMILES String

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

InChIKey

HLDBBQREZCVBMA-UHFFFAOYSA-N

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Allgemeine Beschreibung

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

Anwendung

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

Lagerklassenschlüssel

11 - Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

Analysenzertifikate (COA)

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Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Jonathan Stewart et al.
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