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重要文件

31623

Sigma-Aldrich

二氧化硅

washed and calcined, analytical reagent

同義詞:

白石英砂, 二氧化硅, 石英

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About This Item

線性公式:
SiO2
CAS號碼:
分子量::
60.08
EC號碼:
MDL號碼:
分類程式碼代碼:
12352300
PubChem物質ID:
NACRES:
SB.52
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形狀

granular

品質

washed and calcined, analytical reagent

雜質

≤0.2% Soluble in HCl

損耗

≤0.1% loss on ignition

顆粒化

0.1-0.5 mm (min.70%)

負離子痕跡

chloride (Cl-): ≤100 mg/kg

SMILES 字串

O=[Si]=O

InChI

1S/O2Si/c1-3-2

InChI 密鑰

VYPSYNLAJGMNEJ-UHFFFAOYSA-N

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一般說明

Silicon dioxide (SiO2) exists in three crystalline forms, namely quartz, tridymite and cristobalite. It reacts with hydrofluoric acid to form silicon tetrafluoride (SiF4) and water. Silicates are formed on reacting SiO2 with alkali melts.[1] SiO2 is the main component in glass, brick and concrete and also forms the insulator in silicon devices.[2] The alteration of the surface of SiO2 with (3-aminopropyl)triethoxysilane (APTES) for binding lactate dehydrogenase (LDH) to form an amino layer has been reported.[3] The silicon-silicon dioxide structure has been investigated at liquid nitrogen temperature by electron spin resonance spectra.[4]

應用

Silicon dioxide may be used to produce silicon by electrochemical reduction in the presence of calcium chloride (CaCl2) electrolyte.[5]

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類(WGK)

nwg

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves


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存取文件庫

Pinpoint and bulk electrochemical reduction of insulating silicon dioxide to silicon.
Nohira T, et al.
Nature Materials, 2(6), 397-401 (2003)
Study of silicon-silicon dioxide structure by electron spin resonance I.
Nishi Y.
Japanese Journal of Applied Physics, 10(1), 52-52 (1971)
Electronic structure of silicon dioxide (a review).
Nekrashevich SS and Gritsenko VA.
Physics of the Solid State, 56(2), 207-222 (2014)
Eagleson M.
Concise Encyclopedia Chemistry, 983-984 (1994)
Surface modification of silicon dioxide, silicon nitride and titanium oxynitride for lactate dehydrogenase immobilization.
Saengdee P, et al.
Biosensors And Bioelectronics, 67, 134-138 (2015)

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