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重要文件

935158

Sigma-Aldrich

Infrared Ag2Se quantum dots

λmax, 980 nm, 50 mg/mL in toluene

同義詞:

Fluorescent nanocrystals, INFIQ® quantum dots, Silver based core type QDs

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About This Item

經驗公式(希爾表示法):
Ag2Se
分子量::
294.70
MDL號碼:
分類程式碼代碼:
12352302
PubChem物質ID:
NACRES:
NA.21

形狀

liquid

品質等級

濃度

50 mg/mL in toluene

直徑

<15 nm

λmax

980 nm

儲存溫度

2-8°C

SMILES 字串

[Ag][Se][Ag]

InChI 密鑰

GNWCVDGUVZRYLC-UHFFFAOYSA-N

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相關類別

一般說明

Silver selenide (Ag2Se) quantum dots (QD) are semiconducting inorganic nanoparticles, offered as a concentrated solution (50 mg/mL) in toluene with a maximum absorption (λmax) at a frequency of 980 nm in the near-infrared (NIR) region. They have low cytotoxicity are an environmental friendly alternative to Cd- or Pb-based nanoparticles, as they don′t contain toxic heavy metals.

應用

Ag2Se quantum dots exhibit low toxicity and sharp absorption and fluorescence in the NIR region, making them ideal for bioimaging. They can also be used as blocking layers in DSSCs and for SERS in vibrational studies, for example with "in vivo" analysis of biomolecules. In addition, recent studies suggest they may serve as promising mid-wavelength infrared absorbers for thermal sensors and imagers. Our quantum dots are suitable for R&D applications like solar cells, bioimaging, and photovoltaics.

法律資訊

Product of Quantum Science Ltd
INFIQ is a registered trademark of Quantum Science Ltd.

訊號詞

Danger

危險分類

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Chronic 2 - Asp. Tox. 1 - Flam. Liq. 2 - Repr. 2 - Skin Irrit. 2 - STOT RE 2 - STOT RE 2 Inhalation - STOT SE 3

標靶器官

Central nervous system

儲存類別代碼

3 - Flammable liquids

水污染物質分類(WGK)

WGK 3

閃點(°F)

39.2 °F

閃點(°C)

4 °C


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存取文件庫

Silver Selenide Colloidal Quantum Dots for Mid-Wavelength Infrared Photodetection
Hafiz S B, et al.
ACS Applied Nano Materials, 3, 1631-1636 (2019)
Radial breathing modes in silver selenide quantum dots
Martinez-Nu?ez C N, et al.
Materials Letters, 167, 135-140 (2016)
Ag2Se quantum dots for photovoltaic applications and ligand effects on device performance
Yang Y, et al.
Journal of alloys and compounds, 766, 925-932 (2018)

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