推薦產品
描述
Monolayer h-BN
hBN Coverage: 100% with sporadic adlayers
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1
Orientation: <1-0-0>
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Substrate
Type/Doping: P/B
Wafer Thickness : 500 ± 50 μm
Oxide Thickness: 300 nm
Resistivity: 1 – 10 (ohm/cm)
品質等級
直徑
100 mm (4 in.)
粒徑
>4 μm
InChI
1S/BN/c1-2
InChI 密鑰
PZNSFCLAULLKQX-UHFFFAOYSA-N
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應用
Monolayer hexagonal boron nitride (h-BN), also known as ″white graphene″, is a wide-bandgap 2D crystal (∼6 eV that can be tuned to ∼2 eV) with exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings.
儲存和穩定性
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類（WGK）
WGK 3
分析證明 (COA)
輸入產品批次/批號來搜索 分析證明 (COA)。在產品’s標籤上找到批次和批號，寫有 ‘Lot’或‘Batch’.。
Monolayer to Bulk Properties of Hexagonal Boron Nitride.
Wickramaratne D, et al.
The Journal of Physical Chemistry C, 122(44), 25524-25529 (2018)
Luigi Stagi et al.
Materials (Basel, Switzerland), 12(23) (2019-11-30)
The discovery of graphene has paved the way for intense research into 2D materials which is expected to have a tremendous impact on our knowledge of material properties in small dimensions. Among other materials, boron nitride (BN) nanomaterials have shown
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries
Pablo Ares et al.
Advanced materials (Deerfield Beach, Fla.), 32(1), e1905504-e1905504 (2019-11-19)
2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Furthermore, in recent years hBN crystals have become the material
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