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About This Item
Linear Formula:
Cl2SiH2
CAS Number:
Molecular Weight:
101.01
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
Recommended Products
vapor density
3.5 (vs air)
vapor pressure
1254 mmHg ( 20 °C)
description
film resistivity > 50 Ω-cm
Assay
≥99.99% trace metals basis
autoignition temp.
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES string
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI key
MROCJMGDEKINLD-UHFFFAOYSA-N
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General description
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
Application
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
Supplementary Hazards
Storage Class Code
2A - Gases
WGK
WGK 1
Flash Point(F)
-34.6 °F
Flash Point(C)
-37 °C
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Dichlorosilane-derived nano-silicon inside hollow carbon spheres as a high-performance anode for Li-ion batteries.
Jaumann T, et al.
Journal of Material Chemistry C, 5(19), 9262-9271 (2017)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
Soujanya N Jampala et al.
Journal of agricultural and food chemistry, 53(9), 3618-3625 (2005-04-28)
The structure and rheological properties of xanthan gum (XG) modified in a cold plasma environment were investigated. XG was functionalized in a capacitively coupled 13.56-MHz radio frequency dichlorosilane (DS)-plasma conditions and, consecutively, in situ aminated by ethylenediamine. The surface structure
High growth rate 4H−SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor.
Chowdhury I, et al.
Journal of Crystal Growth, 316(1), 60-66 (2011)
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