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表单
liquid
InChI
1S/C6H19NSi2/c1-8(2,3)7-9(4,5)6/h7H,1-6H3
InChI key
FFUAGWLWBBFQJT-UHFFFAOYSA-N
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一般描述
The product is used to augment the adhesion of photoresist on silicon and SiO2 surfaces.
The effectiveness of HMDS on adhesion is correlated with the reactivity of this compound with surface hydroxyl groups to form a new siloxane end product, i.e. Si-O-Si(CH3)3. This newly formed termination on the substrate renders the surface more hydrophobic in character and leads to greater wettability by photoresist. The latter condition is a crucial factor in good bonding. As a result of these altered characteristics due to the surface chemistry, the treated silicon surfaces become highly compatible with both negative and positive photoresists.
The effectiveness of HMDS on adhesion is correlated with the reactivity of this compound with surface hydroxyl groups to form a new siloxane end product, i.e. Si-O-Si(CH3)3. This newly formed termination on the substrate renders the surface more hydrophobic in character and leads to greater wettability by photoresist. The latter condition is a crucial factor in good bonding. As a result of these altered characteristics due to the surface chemistry, the treated silicon surfaces become highly compatible with both negative and positive photoresists.
应用
HMDS preparations are generally applied to the silicon wafer while spinning, prior to the application of photoresist. As an alternative procedure, the wafers may be immersed in HMDS preparations and allowed to dry after removal.
特点和优势
- Ready-to-use preparations for surface treatment of silicon.
- Promotes photoresist adhesion on silicon and SiO2 films.
- Prevents lift-off at edges of photoresist and reduces undercutting.
- Ensures full-line resolution.
- Improves yields of MOS and integrated silicon devices.
警示用语:
Danger
危险分类
Acute Tox. 3 Dermal - Acute Tox. 4 Inhalation - Aquatic Chronic 3 - Asp. Tox. 1 - Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT RE 2 - STOT SE 3
靶器官
hearing organs, Respiratory system
储存分类代码
3 - Flammable liquids
WGK
WGK 2
闪点(°F)
76.1 °F
闪点(°C)
24.5 °C
Active Filters
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