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920924

Sigma-Aldrich

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

diam. 200 mm (8 in.)

别名:

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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About This Item

经验公式（希尔记法）:
BN
CAS号:
10043-11-5
分子量:
24.82
MDL號碼:
MFCD00008279
分類程式碼代碼:
12352302
NACRES:
NA.23

描述

Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Monolayer h-BN
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers

品質等級

100

電阻係數

5-30 Ω-cm

直徑

200 mm (8 in.)

厚度

300 nm , Oxide
725 ± 25 μm , Wafer

粒徑

>4 μm

InChI

1S/BN/c1-2

InChI 密鑰

PZNSFCLAULLKQX-UHFFFAOYSA-N

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應用

Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • nsulating/transparent coatings

儲存和穩定性

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

WGK 3

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Hexagonal boron nitride nanomechanical resonators with spatially visualized motion
Zheng X, et al
Microsystems & Nanoengineering (2017)
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Ba K, et al.
Scientific Reports, 7 (2017)
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23) (2019)
Monolayer to Bulk Properties of Hexagonal Boron Nitride
Wickramaratne D, et al.
Physical Chemistry, 122, 25524 25529-25524 25529 (2018)
Piezoelectricity in Monolayer Hexagonal Boron Nitride
Ares P, et al.
Advanced Materials, 32 (2020)

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