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Key Documents

920126

Sigma-Aldrich

Graphene, monolayer film

4 in diameter, CVD on silicon wafer, large grain, avg. no. of layers, 1

别名:

Roll-to-Roll graphene

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About This Item

经验公式(希尔记法):
C
分子量:
12.01
分類程式碼代碼:
12141908
NACRES:
NA.23

product name

R2R Monolayer large grain CVD graphene on silicon wafer, 4 in diameter, avg. no. of layers, 1

品質等級

描述

Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5

特點

avg. no. of layers 1

薄層電阻

280 Ω/sq ±10%

尺寸

110 μm × 110 μm ± 10% , grain size

表面覆盖率

surface coverage >98%

透射率

>97%

半導體屬性

(mobility>3000 cm2/V·s) (Hall effect measurements)

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一般說明

Roll-to-roll, high-quality, monolayer CVD graphene with large grain size (∼110μm2) on 4 inch silicon wafer.

應用

Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.
The roll-to-roll process allows continuous, large scale graphene production.
This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET, CVD graphene based sensors, and heterostructure based micro/nano electronics.

Application examples:
  • Ultrafast Transistor
  • Optical devices
  • Bio/Gas Sensor
  • Transparent Electrode
  • Flexible Display
  • Smart Coating
  • Thermal management

注意

Be cautious not to drop
Keep away from contamination, heat, dust and flame etc.

儲存和穩定性

Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.

法律資訊

Product of LG Electronics, R&D use only

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

WGK 3


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Integrating graphene into semiconductor fabrication lines.
Daniel Neumaier et al.
Nature materials, 18(6), 525-529 (2019-05-23)
Hao-Ling Tang et al.
ACS nano, 11(12), 12817-12823 (2017-11-29)
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness
Bing Deng et al.
Advanced materials (Deerfield Beach, Fla.), 31(9), e1800996-e1800996 (2018-10-03)
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain

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