추천 제품
vapor pressure
17.5 mmHg ( 20 °C)
Quality Level
형태
liquid
농도
25 wt. % in H2O
refractive index
n20/D 1.3806
density
1.016 g/mL at 25 °C
SMILES string
[OH-].C[N+](C)(C)C
InChI
1S/C4H12N.H2O/c1-5(2,3)4;/h1-4H3;1H2/q+1;/p-1
InChI key
WGTYBPLFGIVFAS-UHFFFAOYSA-M
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관련 카테고리
일반 설명
Tetramethylammonium hydroxide solution is commonly used as a strong base and nucleophilic source in organic synthesis reactions.
애플리케이션
Tetramethylammonium hydroxide is a quaternary ammonium salt generally used as an anisotropic etchant for silicon due to its high silicon etching rate.
Tetramethylammonium hydroxide solution (25 wt.% solution in water) may be used as a base for pH adjustment to obtain hexagonal mesoporous aluminophosphate (TAP).
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Acute Tox. 1 Dermal - Acute Tox. 2 Oral - Aquatic Chronic 2 - Eye Dam. 1 - Skin Corr. 1B - STOT RE 1 Dermal - STOT SE 1
표적 기관
Central nervous system, Liver,thymus
Storage Class Code
6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
Choose from one of the most recent versions:
Palladium-mediated carboxylation of aryl halides (triflates) or benzyl halides using [13 C]/[11 C] carbon monoxide with tetrabutylammonium hydroxide or trimethylphenylammonium hydroxide
Journal of the Chemical Society. Perkin Transactions 1, 20, 2256-2259 (2002)
Synthesis of mesoporous hexagonal titanium aluminophosphate molecular sieves and their catalytic applications
Applied Catalysis A: General, 203(2), 311-319 (2000)
Tetramethylammonium Hydroxide
eEROS (Encyclopedia of Reagents for Organic Synthesis) (2001)
Study on anisotropic silicon etching characteristics in various surfactant-added tetramethyl ammonium hydroxide water solutions.
Journal of Micromechanics and Microengineering, 15(11), 2028-2028 (2005)
The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO 2 layer.
Sensors and actuators A, Physical, 93(2), 132-137 (2001)
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