- Preparation of mesoporous Si-C-O fibers with a narrow mesopore size distribution.
Preparation of mesoporous Si-C-O fibers with a narrow mesopore size distribution.
Journal of nanoscience and nanotechnology (2013-06-13)
Chengyong Li, Rongan He, Shiying Zhang, Jingyu Liu, Ning Yang
PMID23755678
要旨
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen. The carbon content of the SiC-C fibers was 54.4 wt%, and decreased to lower than 25 wt% after activation for more than 5 hours. Meanwhile, the surface area increased up to 260 m2/g, with a narrow mesopore size distribution mainly in the range of 2-5 nm. The SiC-phase derived from the polycarbosilane and the C-phase derived from the pitch form a bicontinuous interpenetrating network, which plays an important role for the narrow pore size distribution.
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製品内容
Sigma-Aldrich
ケイ素, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
ケイ素, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
ケイ素, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm