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Merck

765015

Sigma-Aldrich

2,2′-Dimethyl-N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4′-diamine

97% (HPLC)

别名:

α-NPD, N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)-2,2′-dimethylbenzidine

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About This Item

经验公式(希尔记法):
C46H36N2
分子量:
616.79
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23

方案

97% (HPLC)

表单

solid

mp

247-252 °C

λmax

306 nm in THF

SMILES字符串

Cc1cc(ccc1-c2ccc(cc2C)N(c3ccccc3)c4cccc5ccccc45)N(c6ccccc6)c7cccc8ccccc78

InChI

1S/C46H36N2/c1-33-31-39(47(37-19-5-3-6-20-37)45-25-13-17-35-15-9-11-23-43(35)45)27-29-41(33)42-30-28-40(32-34(42)2)48(38-21-7-4-8-22-38)46-26-14-18-36-16-10-12-24-44(36)46/h3-32H,1-2H3

InChI key

ZJFKMIYGRJGWIB-UHFFFAOYSA-N

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一般描述

2,2′-Dimethyl-N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4′-diamine (α-NPD) is a conducting polymer that can be used as a hole transporting material (HTM) with a transport gap of ~4 eV and an ionization potential of 5.5 eV.

应用

α-NPD can be used as a π-conjugated organic semiconducting material which has good charge transporting properties. It can be used in the fabrication of organic electronic devices such organic light emitting diodes (OLEDs) and organic solar cells (OSCs).
This material is used as a high performance host material for OLED devices showing increased device efficiency (maximum luminance efficiency was 4.4 cd/A at 9 V for the fluorescent device and 24.4 cd/A for phosphorescent device).

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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访问文档库

Optical band gaps of organic semiconductor materials
Costa JCS, et al.
Optical Materials, 58(1), 51-60 (2016)
Determination of charge-carrier transport in organic devices by admittance spectroscopy: Application to hole mobility in alpha-NPD
Nguyen ND, et al.
Physical Review. B, Condensed Matter and Materials Physics, 75(7), 075307-075307 (2007)
Impact of electrode contamination on the alpha-NPD/Au hole injection barrier
Wan A, et al.
Organic Electronics, 6(1), 47-54 (2005)
Band alignment at organic-inorganic semiconductor interfaces: alpha-NPD and CuPc on InP (110)
Chasse T, et al.
Journal of Applied Physics, 85(9), 6589-6592 (1999)
Tsai; Y.- S.; et al.
Thin Solid Films, 517, 5338-5338 (2009)

商品

Highly reducing or oxidizing species enhance organic semiconductor conductivity by reducing charge-carrier injection barriers.

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