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Merck
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文件

234842

Sigma-Aldrich

硫化钼 (IV)

greener alternative

powder, <2 μm, 98%

别名:

二硫化钼

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About This Item

经验公式（希尔记法）:
MoS2
CAS号:
1317-33-5
分子量:
160.07
EC號碼:
215-263-9
MDL號碼:
MFCD00003470
分類程式碼代碼:
12352300
PubChem物質ID:
24854060
NACRES:
NA.23

化驗

98%

形狀

powder

環保替代產品特色

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

粒徑

<2 μm

密度

5.06 g/mL at 25 °C (lit.)

應用

battery manufacturing

環保替代類別

, Enabling

SMILES 字串

S=[Mo]=S

InChI

1S/Mo.2S

InChI 密鑰

CWQXQMHSOZUFJS-UHFFFAOYSA-N

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相关类别

一般說明

二硫化钼是一种二维层状材料。单层过渡金属二硫化物（TMD）表现出光电导性。TMD层经过机械或化学剥离，可形成纳米片。MoS2 等TMD表现出非线性光学性质，已通过在1064 nm和532 nm处的ns脉冲激光对其进行了详细研究。
我们致力于为您提供更环保的替代产品，以符合“绿色化学的12项原则”的一项或多项原则要求。该产品为增强型，提高了能源效率。点击此处，查看更多详情。

應用

氢化和异构化反应的催化剂。通过化学途径形成MoS2 纳米片的光响应已被研究。MoS2 可能在电子和光电子领域具有潜在应用。

包裝

玻璃瓶封装

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

nwg

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)

分析证书(COA)

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Inkjet Printing of MoS2
Li J, et al.
Advances in Functional Materials, 24(14), 6524- 6531 (2014)
Atomic-scale edge structures on industrial-style MoS2 nanocatalysts.
Lars P Hansen et al.
Angewandte Chemie (International ed. in English), 50(43), 10153-10156 (2011-10-25)
Ting Cao et al.
Nature communications, 3, 887-887 (2012-06-08)
A two-dimensional honeycomb lattice harbours a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K(±). It is particularly appealing to exploit this emergent degree of freedom of charge
Nan-Fu Chiu et al.
Frontiers in bioengineering and biotechnology, 8, 234-234 (2020-04-11)
We constructed a novel surface plasmon resonance (SPR) detection assay using carboxyl-functionalized molybdenum disulfide (carboxyl-MoS2) nanocomposites as a signal amplification sensing film for the ultrasensitive detection of the lung cancer-associated biomarker cytokeratin 19 fragment (CYFRA21-1). The experiment succeeded in MoS2
Optical limiting of layered transition metal dichalcogenide semiconductors
Dong N,et al.
ARKIVOC (Gainesville, FL, United States) null
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