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蒸汽密度
>1 (vs air)
化驗
97%
折射率
n20/D 1.430 (lit.)
bp
92 °C (lit.)
密度
1.08 g/mL at 25 °C (lit.)
儲存溫度
2-8°C
SMILES 字串
C[Si](Cl)(Cl)C=C
InChI
1S/C3H6Cl2Si/c1-3-6(2,4)5/h3H,1H2,2H3
InChI 密鑰
YLJJAVFOBDSYAN-UHFFFAOYSA-N
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一般說明
Dichloromethylvinylsilane reacts with dimethylsulphide borane to form organosilylborane, which further gets ammonolysized to form the polymer of the SiBCN.
應用
Dichloromethylvinylsilane was used as single molecular precursor for the deposition of β-SiC thin films and β -SiC nanowires by metalorganic chemical vapor deposition on bare Si 100 and Ni-coated Si 100 substrates. Dichloromethylvinylsilane was used in the synthesis and characterization of Tris(1-(dichloro(methyl)silyl)ethyl)borane,monomer.
訊號詞
Danger
危險分類
Acute Tox. 3 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2 - Skin Corr. 1B
安全危害
儲存類別代碼
3 - Flammable liquids
水污染物質分類（WGK）
WGK 1
閃點（°F）
38.1 °F - closed cup
閃點（°C）
3.4 °C - closed cup
個人防護裝備
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
其他客户在看
Synthesis and Structure Characterization of Amorphous SiBCN Ceramic Precursors.
Yajing L and Yue Z.
Rare Metals Materials and Engineering, 40, 234-237 (2011)
Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane.
Kang B-C, et al.
J. Vac. Sci. Technol. B, 23(4), 1722-1725 (2005)
Influence of the Precursor Cross-Linking Route on the Thermal Stability of Si- B- C- O Ceramics.
Ischenko V, et al.
Chemistry of Materials, 20(22), 7148-7156 (2008)
H Yamakita et al.
Radioisotopes, 33(8), 513-518 (1984-08-01)
Poly(methylvinylsiloxane)-bonded silica gel was synthesized by condensation reaction between silica gel and the hydrolysis product of methylvinyldichlorosilane. Graft polymerization of styrene or indene onto poly(methylvinylsiloxane)-bonded silica gel was carried out by gamma-ray irradiation and compared with that onto silica gel.
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