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264032

Sigma-Aldrich

Indium

powder, −100 mesh, 99.99% trace metals basis

Sinónimos:

Indium element

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About This Item

Fórmula empírica (notación de Hill):
In
Número de CAS:
7440-74-6
Peso molecular:
114.82
Número CE:
231-180-0
Número MDL:
MFCD00134048
Código UNSPSC:
12141719
ID de la sustancia en PubChem:
24855900
NACRES:
NA.23

presión de vapor

<0.01 mmHg ( 25 °C)

Ensayo

99.99% trace metals basis

Formulario

powder

resistividad

8.37 μΩ-cm

tamaño de partícula

−100 mesh

mp

156.6 °C (lit.)

densidad

7.3 g/mL at 25 °C (lit.)

cadena SMILES

[In]

InChI

1S/In

Clave InChI

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Descripción general

Indium,a rare and stable element, exhibits exceptional properties such as high thermaland electrical conductivity. It finds application in diverse alloys, batteryproduction, and the synthesis of indium tin oxide, essential for transparentelectrodes in LCDs and touchscreens. Additionally, Indium is utilized in theproduction of solar cells, LEDs, and other optoelectronic devices.

Aplicación


  • Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).

  • Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).

  • The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).

Pictogramas

FlameExclamation mark
GHS02,GHS07

Palabra de señalización

Danger

Frases de peligro

H228,H315,H319,H332,H335

Clasificaciones de peligro

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Órganos de actuación

Respiratory system

Código de clase de almacenamiento

4.1B - Flammable solid hazardous materials

Clase de riesgo para el agua (WGK)

WGK 3

Equipo de protección personal

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

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Certificados de análisis (COA)

Lot/Batch Number
MKCL1203
MKBW2768V
MKBS5966V
MKBQ7276V
MKBN3569V

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A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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