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203424

Sigma-Aldrich

Indium(III) oxide

99.998% trace metals basis

Sinónimos:

Diindium trioxide, Indium sesquioxide

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About This Item

Fórmula empírica (notación de Hill):
In2O3
Número de CAS:
1312-43-2
Peso molecular:
277.63
Número CE:
215-193-9
Número MDL:
MFCD00011060
Código UNSPSC:
12352303
ID de la sustancia en PubChem:
24852170
NACRES:
NA.23

presión de vapor

<0.01 mmHg ( 25 °C)

Nivel de calidad

100

Ensayo

99.998% trace metals basis

Formulario

powder

idoneidad de la reacción

reagent type: catalyst
core: indium

densidad

7.18 g/mL at 25 °C (lit.)

aplicaciones

battery manufacturing

cadena SMILES

O=[In]O[In]=O

InChI

1S/2In.3O

Clave InChI

SHTGRZNPWBITMM-UHFFFAOYSA-N

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Aplicación

  • Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
  • Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).

Código de clase de almacenamiento

11 - Combustible Solids

Clase de riesgo para el agua (WGK)

WGK 3

Punto de inflamabilidad (°F)

Not applicable

Punto de inflamabilidad (°C)

Not applicable

Equipo de protección personal

dust mask type N95 (US), Eyeshields, Gloves

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Certificados de análisis (COA)

Lot/Batch Number
MKCW5515
MKCW5238
MKCV2863
MKCV2374
MKCT5564

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Si necesita una versión concreta, puede buscar un certificado específico por el número de lote.

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Sigma-Aldrich

57151

Indium(III) sulfate

Indium(III) chloride 99.999% trace metals basis

Sigma-Aldrich

203440

Indium(III) chloride

Indium powder, 99.99% trace metals basis

Sigma-Aldrich

277959

Indium

Indium(III) acetylacetonate &#8805;99.99% trace metals basis

Sigma-Aldrich

I3300

Indium(III) acetylacetonate

Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Jiefu Yin et al.
Inorganic chemistry, 51(12), 6529-6536 (2012-06-06)
We report here for the first time the hollow, metastable, single-crystal, rhombohedral In(2)O(3) (rh-In(2)O(3)) nanocrystals synthesized by annealing solvothermally prepared InOOH solid nanocrystals under ambient pressure at 400 °C, through a mechanism of the Kirkendall effect, in which pore formation
Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
Ilan Jen-La Plante et al.
Small (Weinheim an der Bergstrasse, Germany), 9(1), 56-60 (2012-11-06)
Nano popcorn: a new formation mechanism for the synthesis of hollow metal oxide nanoparticles through a melt fracture mechanism. The hollow nanoparticles are formed via brittle fracture following the generation of tensile stresses arising due to liquid-phase thermal expansion of
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