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Tetrakis(ethylmethylamid)hafnium(IV)
packaged for use in deposition systems
Synonym(e):
TEMAH, Tetrakis-(ethylmethylamino)-hafnium(IV)
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10 G
1.270,00 €
About This Item
Lineare Formel:
[(CH3)(C2H5)N]4Hf
CAS-Nummer:
Molekulargewicht:
410.90
MDL-Nummer:
UNSPSC-Code:
12352103
PubChem Substanz-ID:
NACRES:
NA.23
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Qualitätsniveau
Form
liquid
Eignung der Reaktion
core: hafnium
reagent type: catalyst
bp
78 °C/0.01 mmHg (lit.)
mp (Schmelzpunkt)
<-50 °C
Dichte
1.324 g/mL at 25 °C (lit.)
Lagertemp.
2-8°C
SMILES String
CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChIKey
NPEOKFBCHNGLJD-UHFFFAOYSA-N
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Allgemeine Beschreibung
Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.
Anwendung
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), [1] which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2.[2][3] TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2.[2][3] TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
Leistungsmerkmale und Vorteile
This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems.
- Steel cylinder connected to 316 stainless steelball-valve
- 1/4 inch male Swagelok VCR connections
Signalwort
Danger
H-Sätze
Gefahreneinstufungen
Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
Zielorgane
Respiratory system
Zusätzliche Gefahrenhinweise
Lagerklassenschlüssel
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flammpunkt (°F)
51.8 °F - closed cup
Flammpunkt (°C)
11 °C - closed cup
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Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 199-204 (2002)
Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
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