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773816

Sigma-Aldrich

2,9-Dihexylanthra[2,1,9-def:6,5,10-d′e′f′]diisoquinoline-1,3,8,10(2H,9H)tetrone

98%

Sinonimo/i:

N,N′-Dihexyl-3,4,9,10-perylenedicarboximide, PDI-C6

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About This Item

Formula empirica (notazione di Hill):
C36H34N2O4
Numero CAS:
25811-56-7
Peso molecolare:
558.67
Numero MDL:
MFCD00728202
Codice UNSPSC:
12352103
ID PubChem:
329767640
NACRES:
NA.23

Saggio

98%

Stato

powder

Punto di fusione

>360 °C (lit)

λmax

524, 448, 229 nm in dichloromethane

Caratteristiche del semiconduttore

N-type (mobility=0.1-2.1 cm2/V·s)

Stringa SMILE

CCCCCCN1C(=O)c2ccc3c4ccc5C(=O)N(CCCCCC)C(=O)c6ccc(c7ccc(C1=O)c2c37)c4c56

InChI

1S/C36H34N2O4/c1-3-5-7-9-19-37-33(39)25-15-11-21-23-13-17-27-32-28(36(42)38(35(27)41)20-10-8-6-4-2)18-14-24(30(23)32)22-12-16-26(34(37)40)31(25)29(21)22/h11-18H,3-10,19-20H2,1-2H3
DAMUEXRCHXVMQS-UHFFFAOYSA-N

Applicazioni

  • High electron transporting character
  • Perylenebis(dicarboximide)s (PDIs) can be used as n-type materials for organic fieldeffect transistors (OFETs)
  • Good optical properties
  • Suitable for use in solution-processed organic phototransistors (OPTs)
  • Excellent candidate as an electron accepting building block for organic photovoltaics (OPVs)

Pittogrammi

Exclamation mark
GHS07

Avvertenze

Warning

Indicazioni di pericolo

H315,H319,H335

Classi di pericolo

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Organi bersaglio

Respiratory system

Codice della classe di stoccaggio

11 - Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

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Certificati d'analisi (COA)

Lot/Batch Number
MKBN3019

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Inho Kim et al.
ACS applied materials & interfaces, 2(5), 1390-1394 (2010-04-22)
We report that device performance of organic solar cells consisting of zinc phthalocyanine and fullerene (C(60)) can be enhanced by insertion of a perylene derivative interfacial layer between fullerene and bathocuproine (BCP) exciton blocking layer (EBL). The morphology of the
Nikita Nekrasov et al.
Nanomaterials (Basel, Switzerland), 9(12) (2019-12-15)
In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic
Mirella El Gemayel et al.
Journal of the American Chemical Society, 134(4), 2429-2433 (2012-01-10)
We report on the fabrication of solution-processed organic phototransistors (OPTs) based on perylenebis(dicarboximide)s (PDIs). We found that the responsivity to the photoillumination depends on the transistor's channel length and that it can be tuned by varying the device geometry. The

Articoli

Polymer Semiconductors for Intrinsically Stretchable Organic Transistors

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

Soluble Pentacene Precursors

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

Development of Small Molecule Donors for Solution-Processed Organic Solar Cells

Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.

Organic Transistors for Biomedical Applications

Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.

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