647705
Silicon
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sinonimo/i:
Silicon element
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| A voi/SKU | Disponibilità | Prezzo |
|---|---|---|
1 ea | Per conoscere la disponibilità, visualizza il carrello | CHF 146.00 |
Informazioni su questo articolo
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer
contains
boron as dopant
greener alternative product characteristics
Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.
sustainability
Greener Alternative Product
diam. × thickness
2 in. × 0.3 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<111>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
1 of 1
Questo articolo | |||
|---|---|---|---|
| form crystalline (cubic (a = 5.4037)), wafer | form crystalline (cubic (a = 5.4037)), wafer (single side polished) | form crystalline (cubic (a = 5.4037)), wafer (single side polished) | form crystalline (cubic (a = 5.4037)), wafer (single side polished) |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| Quality Level 100 | Quality Level 100 | Quality Level 100 | Quality Level 100 |
| diam. × thickness 2 in. × 0.3 mm | diam. × thickness 3 in. × 0.5 mm | diam. × thickness 3 in. × 0.5 mm | diam. × thickness 2 in. × 0.5 mm |
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