The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.
647675
Silicon
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sinonimo/i:
Silicon element
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1 SET
CHF 142.00
5 EA
CHF 485.00
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Cambia visualizzazione
1 SET
CHF 142.00
5 EA
CHF 485.00
About This Item
Formula condensata:
Si
Numero CAS:
Peso molecolare:
28.09
Numero MDL:
Codice UNSPSC:
12352300
ID PubChem:
NACRES:
NA.23
Prodotti consigliati
Stato
crystalline (cubic (a = 5.4037))
wafer (single side polished)
contiene
boron as dopant
diam. × spessore
2 in. × 0.5 mm
P. ebollizione
2355 °C (lit.)
Punto di fusione
1410 °C (lit.)
Densità
2.33 g/mL at 25 °C (lit.)
Caratteristiche del semiconduttore
<100>, P-type
Stringa SMILE
[Si]
InChI
1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Categorie correlate
Applicazioni
Confezionamento
1EA refers to 1 wafer and 5EA refers to 5 wafers
Proprietà fisiche
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Codice della classe di stoccaggio
13 - Non Combustible Solids
Classe di pericolosità dell'acqua (WGK)
nwg
Punto d’infiammabilità (°F)
Not applicable
Punto d’infiammabilità (°C)
Not applicable
Dispositivi di protezione individuale
Eyeshields, Gloves, type N95 (US)
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sheet resistance of 647675 of silicon
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