Passa al contenuto
Merck
Tutte le immagini(1)

Documenti

647543

Sigma-Aldrich

Silicon

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Sinonimo/i:

Silicon element

Autenticatiper visualizzare i prezzi riservati alla tua organizzazione & contrattuali
Tutte le immagini(1)

About This Item

Formula condensata:
Si
Numero CAS:
7440-21-3
Peso molecolare:
28.09
Numero CE:
231-130-8
Numero MDL:
MFCD00085311
Codice UNSPSC:
12352300
ID PubChem:
24883544
NACRES:
NA.23

Forma fisica

crystalline (cubic (a = 5.4037))
wafer (single side polished)

non contiene

dopant

diam. × spessore

3 in. × 0.5 mm

P. eboll.

2355 °C (lit.)

Punto di fusione

1410 °C (lit.)

Densità

2.33 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<111>, N-type

Stringa SMILE

[Si]

InChI

1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Cerchi prodotti simili? Visita Guida al confronto tra prodotti

Proprietà fisiche

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity >1,000 Ω•cm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type N95 (US)

Certificati d'analisi (COA)

Cerca il Certificati d'analisi (COA) digitando il numero di lotto/batch corrispondente. I numeri di lotto o di batch sono stampati sull'etichetta dei prodotti dopo la parola ‘Lotto’ o ‘Batch’.

Possiedi già questo prodotto?

I documenti relativi ai prodotti acquistati recentemente sono disponibili nell’Archivio dei documenti.

Visita l’Archivio dei documenti

I clienti hanno visto anche

Slide 1 of 3

1 of 3

Silicon dioxide single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Silicon dioxide

Aluminum oxide single crystal substrate, &#60;0001&#62;

Sigma-Aldrich

634875

Aluminum oxide

Gold coated silicon wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Gold coated silicon wafer

Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Visualizza tutti i documenti correlati

Articoli

Molecular Monolayers on Silicon Surfaces

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Protocolli

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Il team dei nostri ricercatori vanta grande esperienza in tutte le aree della ricerca quali Life Science, scienza dei materiali, sintesi chimica, cromatografia, discipline analitiche, ecc..

Contatta l'Assistenza Tecnica.