553123

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

• Sinonimo/i: TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
• Formula condensata: [(CH₃)(C₂H₅)N]₄Hf
• Numero CAS: 352535-01-4
• Peso molecolare: 410.90
• Numero MDL: MFCD03427130
• Codice UNSPSC: 12352103
• ID PubChem: 24879306
• NACRES: NA.23

Proprietà

• Saggio: ≥99.99% trace metals basis
• Forma fisica: liquid
• Impiego in reazioni chimiche: core: hafnium
• Impurezze: Purity excludes ~2000 ppm Zirconium
• P. eboll.: 78 °C/0.01 mmHg (lit.)
• Punto di fusione: <-50 °C
• Densità: 1.324 g/mL at 25 °C (lit.)
• Stringa SMILE: CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
• InChI: 1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4; NPEOKFBCHNGLJD-UHFFFAOYSA-N

Descrizione

Descrizione generale

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

Applicazioni

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO₂) thin films. Because HfO₂ has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO₂ on 2D materials, like MoS₂.


TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf₁-xZrxO₂ thin films on MoS₂ phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf₃N₄) by ALD alternatively pulsing TEMAH and ammonia.

Caratteristiche e vantaggi

• Thermally stable.
• It has sufficient volatility and is suitable for use in vapor deposition.
• Completely self-limiting surface reactions.

Informazioni sulla sicurezza

• Pittogrammi: GHS02,GHS05,GHS07
• Avvertenze: Danger
• Indicazioni di pericolo: H225,H260,H302,H314,H335
• Consigli di prudenza: P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338
• Classi di pericolo: Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
• Organi bersaglio: Respiratory system
• Rischi supp: EUH014
• Codice della classe di stoccaggio: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• Classe di pericolosità dell'acqua (WGK): WGK 3
• Punto d’infiammabilità (°F): 51.8 °F - closed cup
• Punto d’infiammabilità (°C): 11 °C - closed cup
• Dispositivi di protezione individuale: Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter