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Sigma-Aldrich

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2 ′′:5′′,2′′′-quaterthiophene

Synonyme(s) :

α,ω-Diperfluorohexyl-quarterthiophene, DFH-4T

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About This Item

Formule empirique (notation de Hill):
C28H8F26S4
Numéro CAS:
446043-85-2
Poids moléculaire :
966.58
Numéro MDL:
MFCD23098728
Code UNSPSC :
12352103
ID de substance PubChem :
329767133
Nomenclature NACRES :
NA.23

Forme

solid

Pf

205-210 °C

Propriétés du semi-conducteur

N-type (mobility≤0.64 cm2/V·s)

Chaîne SMILES 

FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)c1ccc(s1)-c2ccc(s2)-c3ccc(s3)-c4ccc(s4)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

InChI

1S/C28H8F26S4/c29-17(30,19(33,34)21(37,38)23(41,42)25(45,46)27(49,50)51)15-7-5-13(57-15)11-3-1-9(55-11)10-2-4-12(56-10)14-6-8-16(58-14)18(31,32)20(35,36)22(39,40)24(43,44)26(47,48)28(52,53)54/h1-8H

Clé InChI

UBMTYFFPSPVBSP-UHFFFAOYSA-N

Description générale

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH-4T) is a n-type semiconducting material. It is a quaterthiophene derivative that contains fluoroalkyl groups and can be used as an electron transporting layer. It can be used in organic electronics.

Application

This molecule has shown high mobilities (electron mobilities of up to 0.64 cm2/Vs) when used as an n-type semiconducting material in OFET devices.

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

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Overlapping-Gate Organic Light-Emitting Transistors
Lee J, et al.
Advanced Electronic Materials, 5(1), 1800437-1800437 (2019)
A new method of using supercritical carbon dioxide as a green solvent for synthesis and purification of 5, 5?-bis (tridecafluorohexyl)-2, 2?: 5?, 2 ?: 5 ?, 2?-quaterthiophene, which is one of n-type organic semiconducting materials
Hirase R, et al.
Tetrahedron Letters, 59(5), 469-472 (2018)
Hakan Usta et al.
Accounts of chemical research, 44(7), 501-510 (2011-05-28)
Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features

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