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685070

Sigma-Aldrich

Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene]

99.9%

Synonyme(s) :

F8T2, Poly(9,9-dioctylfluorene-alt-bithiophene), Poly[[2,2′-bithiophene]-5,5′-diyl(9,9-dioctyl-9H-fluorene-2,7-diyl)]

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About This Item

Formule linéaire :
(C37H44S2)n(C8H9)2
Numéro CAS:
210347-56-1
Code UNSPSC :
12352103
Nomenclature NACRES :
NA.23

Pureté

99.9%

Forme

powder

Poids mol.

average Mn >20,000

Fluorescence

λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)

Propriétés du semi-conducteur

P-type (mobility=5×10−3 cm2/V·s)

Catégories apparentées

Description générale

F8T2 is a fluorenated semiconducting polymer which can be used as a hole transporting layer with mobility of 0.02cm2V-1s-1. It is highly stable in vacuum and UV based environment. Its liquid crystallinity allows it to form a self-ordered nanostructure on organic thin films.
Typically soluble in THF, Dichloromethane, or Tolune. (c = 1%, typical appearance may be clear to turbid).
Polymer is end-capped with 3,5-dimethylbenzene.

Application

F8T2 can be majorly used in the fabrication of active layers for optoelectronics and energy based devices such as organic field effect transistors(OFETs), solar cells, light emitting diodes(LEDs) and electronic gas sensors.

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Certificats d'analyse (COA)

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Consulter la Bibliothèque de documents

Preparation of active layer of solar cells device by F8T2 blending with PCBM
CPMT Symposium Japan, 2010 IEEE, 3(13), 1-4 (2010)
Organic/inorganic F8T2/GaN light emitting heterojunction.
Wu YJ, et al.
Organic Electronics, 49(3), 64-68 (2017)
Accelerating gas adsorption on 3D percolating carbon nanotubes.
Li H, et al.
Scientific Reports, 6(13), 21313-21313 (2016)
Natalie Stutzmann et al.
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
Photovoltaic properties and charge dynamics in nanophase-separated F8T2/PCBM blend films.
Yasuda T, et al.
J. Photopolym. Sci. Technol., 25(3), 271-276 (2012)
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