393541

Gallium(III)-acetylacetonat

99.99% trace metals basis

• Synonym(e): Ga(acac)₃, Gallium(III)-2,4-pentandionat
• Lineare Formel: [CH₃COCH=C(O-)CH₃]₃Ga
• CAS-Nummer: 14405-43-7
• Molekulargewicht: 367.05
• NACRES: NA.23
• PubChem Substance ID: 24864524
• UNSPSC Code: 12352103
• EC Number: 238-377-0
• MDL number: MFCD00013492

Eigenschaften

• Quality Segment: 100
• assay: 99.99% trace metals basis
• form: solid
• reaction suitability: core: gallium, reagent type: catalyst
• mp: 196-198 °C (dec.) (lit.)
• SMILES string: CC(=O)\C=C(\C)O[Ga](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O
• InChI: 1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-;
• InChI key: ZVYYAYJIGYODSD-LNTINUHCSA-K

Beschreibung

General description

Gallium(III) acetylacetonate is a white to off-white crystalline solid with purity (99.99% trace metals basis) widely used as a precursor for thin films and nanomaterials. It is soluble in organic solvents such as ethanol, acetone, and toluene, making it suitable for solution-based nanoparticle synthesis. Its thermal stability, with decomposition occurring above ~200 °C, allows for controlled gallium release, making it ideal for the synthesis of nanomaterials and oxide layers. It is commonly employed in metal-organic chemical vapor deposition (CVD) and atomic layer deposition (ALD) to produce gallium oxide (Ga₂O₃) and gallium nitride (GaN) thin films, which are essential for electronic and optoelectronic applications.

Application

Gallium(III) acetylacetonate can be used:

• As a precursor to synthesize nanocrystalline gallium oxide spinels via solvothermal process for various applications like photocatalysis, battery cathode materials and electrocatalysis.
• To fabricate LiGa alloy layer on Li metal anode from in-situ electroreduction. It suppresses the anode dendrite formation in lithium-sulfur batteries.
• To prepare highly efficient gallium-platinum (GaPt₃) nanoparticles hot-solvent synthesis which act as electrocatalysts for hydrogen evolution reaction.
• To synthesize γ-Ga₂O₃ nanocrystals for fabricating electron-transporting layer for perovskite solar cells. It forms effective interfacial connections with the perovskite top layer, enhancing the efficiency of charge transport.

Features and Benefits

• The high purity (99.99% trace metals basis) ensures that no impurities interfere with the synthesis process, leading to higher yields and better quality of the gallium compounds.
• High purity enhances catalytic activity and selectivity, reducing the formation of by-products and improving overall reaction efficiency.
• The absence of trace metal impurities ensures the integrity and performance of the thin films, resulting in improved device efficiency and longevity of optoelectronic devices.
• The high purity of the precursor minimizes defects and impurities in the semiconductor materials, enhancing their electrical properties and performance.

Sicherheitshinweise

• pictograms: GHS08,GHS07
• signalword: Warning
• hcodes: H302 + H312 + H332,H315,H319,H335,H351
• pcodes: P280 - P301 + P312 - P302 + P352 + P312 - P304 + P340 + P312 - P305 + P351 + P338 - P308 + P313
• Hazard Classifications: Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Carc. 2 - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
• target_organs: Respiratory system
• Lagerklasse: 11 - Combustible Solids
• wgk: WGK 3
• flash_point_f: Not applicable
• flash_point_c: Not applicable
• ppe: dust mask type N95 (US), Eyeshields, Gloves