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326607
Indium
beads, diam. 2-5 mm, ≥99.9% trace metals basis
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About This Item
Empirische Formel (Hill-System):
In
CAS-Nummer:
Molekulargewicht:
114.82
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12141719
PubChem Substanz-ID:
NACRES:
NA.23
Empfohlene Produkte
Dampfdruck
<0.01 mmHg ( 25 °C)
Assay
≥99.9% trace metals basis
Form
beads
Widerstandsfähigkeit
8.37 μΩ-cm
Durchmesser
2-5 mm
mp (Schmelzpunkt)
156.6 °C (lit.)
Dichte
7.3 g/mL at 25 °C (lit.)
SMILES String
[In]
InChI
1S/In
InChIKey
APFVFJFRJDLVQX-UHFFFAOYSA-N
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Verwandte Kategorien
Lagerklassenschlüssel
13 - Non Combustible Solids
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
dust mask type N95 (US), Eyeshields, Gloves
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Yongseok Kwon et al.
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This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
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