Recommended Products
vapor pressure
<0.01 mmHg ( 537.2 °C)
autoignition temp.
572 °F
resistivity
13.5 μΩ-cm, 20°C
bp
5425 °C (lit.)
mp
2996 °C (lit.)
density
16.69 g/cm3 (lit.)
SMILES string
[Ta]
InChI
1S/Ta
InChI key
GUVRBAGPIYLISA-UHFFFAOYSA-N
Application
Tantalum powder, a semiconducting material, is used as a photocatalyst and shows high efficiency in the solar splitting of water. Its biocompatibility makes it useful in the development of medical devices and implants.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Flam. Sol. 1
Storage Class Code
4.1B - Flammable solid hazardous materials
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Certificates of Analysis (COA)
Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Customers Also Viewed
Tantalum-based semiconductors for solar water splitting
Chemical Society Reviews, 43(13), 4395-4422 (2014)
Additively manufactured porous tantalum implants
Acta Biomaterialia, 14(13), 217-225 (2015)
Journal of the mechanical behavior of biomedical materials, 16, 21-28 (2012-11-10)
Microstructure and mechanical properties of laser deposited complex quaternary Ti-34Nb-7Zr-7Ta (all wt%), an orthopedic load-bearing implant alloy, has been investigated in detail in both as-deposited as well as heat-treated (β-solutionized and quenched) conditions. The difference in stress-strain behavior of this
Vascular, 21(2), 87-91 (2013-03-20)
Control of back bleeding from the hypogastric artery into the aneurysm after endovascular aneurysm repair (EVAR) of a ruptured aorto-iliac aneurysm may be necessary in order to avoid a type II endoleak. It is an emergency situation and selective catheterization
Nanoscale, 5(4), 1494-1498 (2013-01-23)
Ta oxide nanotubes (NTs) were formed by the anodization of Ta at 15 V in a solution of concentrated sulfuric acid containing 0.8-1.0 M hydrofluoric acid. To study the initial stages of NT formation, FESEM images of samples anodized for
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service