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760463

Sigma-Aldrich

Hafnium(IV) tert-butoxide

packaged for use in deposition systems

Synonym(s):

Hafnium tetra-t -butoxide, Hafnium tetrakis(t -butoxide), Tetra-t -butoxyhafnium, Tetrakis(t -butoxy)hafnium

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About This Item

Linear Formula:
Hf[OC(CH3)3]4
CAS Number:
Molecular Weight:
470.94
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

form

liquid

reaction suitability

core: hafnium

refractive index

n20/D 1.424 (lit.)

bp

90 °C/5 mmHg (lit.)

density

1.166 g/mL at 25 °C (lit.)

SMILES string

CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C

InChI

1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4

InChI key

WZVIPWQGBBCHJP-UHFFFAOYSA-N

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Application

Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.

pictograms

FlameExclamation mark

signalword

Warning

Hazard Classifications

Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

3 - Flammable liquids

wgk_germany

WGK 3

flash_point_f

82.4 °F - closed cup

flash_point_c

28 °C - closed cup


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Dabrian, A.; et al.
Crystal Growth & Design, 11, 203-203 (2011)
Williams, P. A.; et al
Journal of Materials Chemistry, 12, 165-165 (2002)
Sean W Depner et al.
ACS nano, 8(5), 4678-4688 (2014-04-23)
We demonstrate that the degree of branching of the alkyl (R) chain in a Hf(OR)4 precursor allows for control over the length of HfO2 nanocrystals grown by homocondensation of the metal alkoxide with a metal halide. An extended nonhydrolytic sol-gel

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