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378097

Sigma-Aldrich

Silicon carbide

-200 mesh particle size

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About This Item

Linear Formula:
SiC
CAS Number:
Molecular Weight:
40.10
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

form

powder

particle size

-200 mesh

mp

2700 °C (lit.)

density

3.22 g/mL at 25 °C (lit.)

SMILES string

[C-]#[Si+]

InChI

1S/CSi/c1-2

InChI key

HBMJWWWQQXIZIP-UHFFFAOYSA-N

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General description

Silicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of electronic and optoelectronic applications.

Application

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices(OLEDs), UV detectors, high temperature electronics (nuclear electronics), high frequency devices

Storage Class

11 - Combustible Solids

wgk_germany

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Properties of silicon carbide (1995)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
Whitaker B, et al.
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
Optical polarization of nuclear spins in silicon carbide
Falk AL, et al.
Physical Review Letters, 114(24), 247603-247603 (2015)
High efficiency GaN-based LEDs and lasers on SiC
Edmond J, et al.
Journal of Crystal Growth, 272(1-4), 242-250 (2004)

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