- Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates.
Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates.
Angewandte Chemie (International ed. in English) (2009-06-06)
Lianbing Zhang, Avinash J Patil, Le Li, Angelika Schierhorn, Stephen Mann, Ulrich Gösele, Mato Knez
PMID19492376
摘要
New uses for ALD: By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site-specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A = Ph, p-HO(3)SC(6)H(4).