推薦產品
等級
ACS reagent
puriss. p.a.
化驗
≥98%
形狀
solid
雜質
≤0.1% hexafluorosilicate (as SiF6)
≤1% ammonium hydrogen difluoride (NH4HF2)
燃燒殘留物
≤0.005% (as SO4)
負離子痕跡
chloride (Cl-): ≤5 mg/kg
sulfate (SO42-): ≤50 mg/kg
正離子痕跡
Cd: ≤5 mg/kg
Cu: ≤5 mg/kg
Fe: ≤5 mg/kg
K: ≤20 mg/kg
Na: ≤20 mg/kg
Pb: ≤5 mg/kg
Zn: ≤5 mg/kg
SMILES 字串
N.F
InChI
1S/FH.H3N/h1H;1H3
InChI 密鑰
LDDQLRUQCUTJBB-UHFFFAOYSA-N
尋找類似的產品? 前往 產品比較指南
訊號詞
Danger
危險分類
Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral
儲存類別代碼
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
水污染物質分類(WGK)
WGK 1
閃點(°F)
does not flash
閃點(°C)
does not flash
分析證明 (COA)
輸入產品批次/批號來搜索 分析證明 (COA)。在產品’s標籤上找到批次和批號,寫有 ‘Lot’或‘Batch’.。
Etching processing of Si (111) and Si (100) surfaces in an ammonium fluoride solution investigated by in situ ATR-IR.
Electrochimica Acta, 41(5), 681-686 (1996)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
Clinical implant dentistry and related research, 10(1), 55-61 (2008-02-08)
Previously, we reported that anodized porous titanium implants have photocatalytic hydrophilicity. However, this effect was not always sufficient for the significant improvement of bone apposition. The purpose of this study was to improve the photocatalytic properties of porous titanium implants
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