蒸汽壓力
1 mmHg ( 487 °C)
化驗
99.95%
形狀
foil
製造商／商標名
Goodfellow 840-725-40
電阻係數
5.8 μΩ-cm, 20°C
直徑× 厚度
8 mm × 0.25 mm
bp
907 °C (lit.)
mp
420 °C (lit.)
密度
7.133 g/mL at 25 °C (lit.)
SMILES 字串
[Zn]
InChI
1S/Zn
InChI 密鑰
HCHKCACWOHOZIP-UHFFFAOYSA-N
一般說明
For updated SDS information please visit www.goodfellow.com.
法律資訊
Product of Goodfellow
Hongqin Liu et al.
ACS applied materials & interfaces, 1(9), 2086-2091 (2010-04-02)
Zinc, silicon, and steel superhydrophobic surfaces were prepared by a simple solution-immersion technique. In the case of zinc, the method consists of dipping of the substrate in a prehydrolyzed methanol solution of 1H,1H,2H,2H-(perfluorooctyl)trichlorosilane [CF(3)(CF(2))(5)(CH(2))(2)SiCl(3), PFTS] for 24 h at 50
Zhengquan Li et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 10(22), 5823-5828 (2004-10-09)
A solution surface-erosion route was successfully employed to produce one-dimensional (1D) ZnO nanostructures. ZnO nanorod arrays and three-dimensional urchin-like assemblies could be selectively obtained with different manipulations. In this process, zinc foil was introduced to an organic solution system and
Yang Liu et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 13(23), 6667-6673 (2007-05-31)
Well-aligned zinc oxide microrod and microtube arrays with high aspect ratios were fabricated on zinc foil by a simple solution-phase approach in an aqueous solution of ethylenediamine (en). The shape of the ZnO microstructures can be easily modulated from rods
Conghua Lu et al.
Chemical communications (Cambridge, England), (33)(33), 3551-3553 (2006-08-22)
Large-scale, ultralong ZnO nanowire and nanobelt arrays with honeycomb-like micropatterns have been fabricated by hydrothermal oxidation of zinc foil in aqueous alkaline (NH4)2S2O8 solutions.
Lance Brockway et al.
Physical chemistry chemical physics : PCCP, 15(17), 6260-6267 (2013-03-23)
A simple method for the large-scale synthesis of gram quantities of compound semiconductor nanowires without the need for any external catalysts or templates is presented. This method is demonstrated using zinc phosphide (Zn3P2) and zinc antimonide (β-Zn4Sb3) nanowires as example
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