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795712

Sigma-Aldrich

Molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene)

同義詞:

Mo(tfd)3

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About This Item

經驗公式（希爾表示法）:
C12F18MoS6
CAS號碼:
1494-07-1
分子量：:
774.43
分類程式碼代碼:
12352103
PubChem物質ID:
329768505

形狀

solid

SMILES 字串

FC(F)(F)C(S1)=C(C(F)(F)F)S[Mo]213(SC(C(F)(F)F)=C(C(F)(F)F)S3)SC(C(F)(F)F)=C(C(F)(F)F)S2

InChI

1S/3C4H2F6S2.Mo/c3*5-3(6,7)1(11)2(12)4(8,9)10;/h3*11-12H;/q;;;+6/p-6/b3*2-1-;

InChI 密鑰

KPELOYUGUICPOT-JVUUZWNBSA-H

一般說明

The p dopant Mo(tfd)3 has high electron affinity (EA= 5.6 eV).The efficiency of Mo(tfd)3 as a dopant has been studied extensively by ultraviolet and X ray photoelectron spectroscopy, Rutherford backscattering, etc.

應用

Molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd)3) may be used to p dope the hole transporting layer of HTM N,N′-di[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4′- diamine.
It may be used as a dopant to reduced contact resistance in pentacene based organic field effect transistors (OFETs).

生化／生理作用

p-dopant

象形圖

Exclamation mark
GHS07

訊號詞

Warning

危險聲明

H315,H319,H335

危險分類

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

標靶器官

Respiratory system

儲存類別代碼

11 - Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

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分析證明 (COA)

Lot/Batch Number

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Pentacene organic field-effect transistors with doped electrode-semiconductor contacts
Tiwari SP, et al.
Organic Electronics null
Yabing Qi et al.
Journal of the American Chemical Society, 131(35), 12530-12531 (2009-08-15)
Experimental and theoretical results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)(3)), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopant for organic molecular semiconductors. The electron affinity of the compound, determined via
Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers.
Qi Y, et al.
Journal of the American Chemical Society, 12530-12531 null
A Molybdenum Dithiolene Complex as p-Dopant for Hole-Transport Materials: A Multitechnique Experimental and Theoretical Investigation
Qi, Y.;
Chemistry of Materials, 22, 524-524 (2010)
Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering
Zhao W, et al.
Applied Physics Letters null
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