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Merck
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文件

747092

Sigma-Aldrich

C8-BTBT

≥99% (HPLC)

同義詞:

2,7-二辛基[1]苯并噻吩[3,2-b][1]苯并噻吩

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About This Item

經驗公式（希爾表示法）:
C30H40S2
CAS號碼:
583050-70-8
分子量：:
464.77
分類程式碼代碼:
12352103
PubChem物質ID:
329765808
NACRES:
NA.23

化驗

≥99% (HPLC)

形狀

powder

mp

108-112 °C

半導體屬性

P-type (mobility=5.5 cm2/V·s)

SMILES 字串

CCCCCCCCC1=CC2=C(C=C1)C3=C(C(C=CC(CCCCCCCC)=C4)=C4S3)S2

InChI

1S/C30H40S2/c1-3-5-7-9-11-13-15-23-17-19-25-27(21-23)31-30-26-20-18-24(22-28(26)32-29(25)30)16-14-12-10-8-6-4-2/h17-22H,3-16H2,1-2H3

InChI 密鑰

YWIGIVGUASXDPK-UHFFFAOYSA-N

一般說明

C8-BTBT是一种导电聚合物，以[1]苯并噻吩并[3,2-b][1]-苯并噻吩(BTBT)为基础材料，用于开发空气稳定的半导体。它可以形成旋涂薄膜，从而用作电荷迁移率43 cm2V-1s-1的p型半导体。它在石墨烯和六方氮化硼(hBN) 上形成高度有序的自组装单分子层(SAM)膜，薄层电阻：<1,000 ohm/sq

應用

C8-BTBT是一种复合聚合物，可用于多种基于有机电子的应用，包括有机光伏电池 (OPV)、有机发光二极管 (OLED)和有机薄膜晶体管(OTFT)。
高场效应迁移率5.5-5.7 cm2/Vs 和109 的高开/关比例；溶液处理(溶解度为80 mg/mL) OFETs

法律資訊

Nippon Kayaku出品

儲存類別代碼

11 - Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

分析證明 (COA)

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Zhimin Chai et al.
ACS applied materials & interfaces, 10(21), 18123-18130 (2018-05-09)
Assembly of organic semiconductors with ordered crystal structure has been actively pursued for electronics applications such as organic field-effect transistors (OFETs). Among various film deposition methods, solution-based film growth from small molecule semiconductors is preferable because of its low material
Solution-processable organic single crystals with bandlike transport in field-effect transistors.
Liu C, et al.
Advanced Materials, 23(4), 523-526 (2011)
Darmawan; Peter;
Advances in Functional Materials, 22(21), 4577-4583 (2012)
Zhimin Chai et al.
Nanotechnology, 30(48), 485203-485203 (2019-08-31)
Achieving low-cost fabrication of organic field-effect transistors (OFETs) has long been pursued in the semiconductor industry. Solution-based process allows the fabrication of OFETs cost-effective because of its merit of vacuum-free and room temperature operation. Here, we show a facile and
Jeong-Wan Jo et al.
Materials (Basel, Switzerland), 13(23) (2020-12-11)
The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3)
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