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679208

Sigma-Aldrich

甲基三氯硅烷

deposition grade, ≥98% (GC), ≥99.99% (as metals)

同義詞:

三氯(甲基)硅烷

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About This Item

線性公式:
CH3SiCl3
CAS號碼:
分子量::
149.48
Beilstein:
1361381
EC號碼:
MDL號碼:
分類程式碼代碼:
12352103
PubChem物質ID:
NACRES:
NA.23

等級

deposition grade

蒸汽密度

5.2 (vs air)

蒸汽壓力

150 mmHg ( 25 °C)

化驗

≥98% (GC)
≥99.99% (as metals)

形狀

liquid

自燃溫度

>760 °F

expl. lim.

11.9 %

折射率

n20/D 1.411 (lit.)

bp

66 °C (lit.)

密度

1.273 g/mL at 25 °C (lit.)

SMILES 字串

C[Si](Cl)(Cl)Cl

InChI

1S/CH3Cl3Si/c1-5(2,3)4/h1H3

InChI 密鑰

JLUFWMXJHAVVNN-UHFFFAOYSA-N

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訊號詞

Danger

危險分類

Acute Tox. 3 Inhalation - Acute Tox. 4 Dermal - Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1A - STOT SE 3

標靶器官

Respiratory system

儲存類別代碼

3 - Flammable liquids

水污染物質分類(WGK)

WGK 1

閃點(°F)

46.4 °F - closed cup

閃點(°C)

8 °C - closed cup


分析證明 (COA)

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W H Mullen et al.
Clinica chimica acta; international journal of clinical chemistry, 157(2), 191-198 (1986-06-15)
An enzyme electrode is described based upon the enzyme lactate oxidase (EC 1.1.3.2) coupled to an H2O2 sensor. Use of an organosilane-treated microporous membrane over the enzyme layer, allows responses linear to 18 mmol/l L-lactate with response times of 1-3
Yingbin Ge et al.
The journal of physical chemistry. A, 111(8), 1475-1486 (2007-02-06)
The kinetics for the previously proposed 114-reaction mechanism for the chemical vapor deposition (CVD) process that leads from methyltrichlorosilane (MTS) to silicon carbide (SiC) are examined. Among the 114 reactions, 41 are predicted to proceed with no intervening barrier. For
Ildikó Szabó et al.
Biopolymers, 88(1), 20-28 (2006-10-26)
Rearrangement of disulfide bonds during the synthesis of alpha-conotoxin GI using PhS(O)Ph/CH(3)SiCl(3) oxidation procedure was observed. We have demonstrated that the protecting scheme (order of acetamidomethyl (Acm) and (t)Bu protecting groups) of the Cys residues as well as the reaction
Yingbin Ge et al.
The journal of physical chemistry. A, 114(6), 2384-2392 (2010-01-29)
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of methyltrichlorosilane (Ge, Y. B.; Gordon, M. S.; Battaglia, F.; Fox, R. O. J. Phys. Chem. A 2007, 111, 1462.) were calculated. Transition state theory was
Zhengfang Xie et al.
Journal of nanoscience and nanotechnology, 7(2), 647-652 (2007-04-25)
Silicon carbide nanotubes (SiCNTs) were directly synthesized by chemical vapor deposition (CVD) in the paper. Methyltrichlorosilane (MTS) was selected as the SiC gaseous source and, ferrocence and thiophene as the catalyst and the cocatalyst, respectively. The influences of reaction temperature

文章

Deposition Grade Silanes, fully characterized by chemical analysis and nuclear magnetic resonance (NMR) with greater than 98% purity, for Sol-Gel Processes.

Reactive silicone chemistry: Focus on pure silicon production, polymerizations, and controlled stereochemistry reactions.

涉及到反应性有机硅化学的研究已聚焦于纯硅和杂合材料的生产、氢化硅烷化、开环和原子转移聚合,以及具有受控立体化学的聚合和缩合反应。

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

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我們的科學家團隊在所有研究領域都有豐富的經驗,包括生命科學、材料科學、化學合成、色譜、分析等.

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