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Merck
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重要文件

266779

Sigma-Aldrich

wire, diam. 1.0 mm, ≥99.9% trace metals basis (purity excludes ~2% zirconium)

同義詞:

Celtium, Hafnium element

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About This Item

經驗公式(希爾表示法):
Hf
CAS號碼:
分子量::
178.49
EC號碼:
MDL號碼:
分類程式碼代碼:
12352300
PubChem物質ID:

品質等級

化驗

≥99.9% trace metals basis (purity excludes ~2% zirconium)

形狀

wire

電阻係數

29.6 μΩ-cm, 0°C

直徑

1.0 mm

bp

4602 °C (lit.)

mp

2227 °C (lit.)

密度

13.3 g/cm3 (lit.)

SMILES 字串

[Hf]

InChI

1S/Hf

InChI 密鑰

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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數量

2g = 20cm

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類(WGK)

WGK 1

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)


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分析證明 (COA)

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Laurence Maggiorella et al.
Future oncology (London, England), 8(9), 1167-1181 (2012-10-04)
There is considerable interest in approaches that could improve the therapeutic window of radiotherapy. In this study, hafnium oxide nanoparticles were designed that concentrate in tumor cells to achieve intracellular high-energy dose deposit. Conventional methods were used, implemented in different
José Luis Olivares-Romero et al.
Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)
Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.
Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect

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