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334073

Sigma-Aldrich

Indium(III) chloride tetrahydrate

97%

Synonym(s):

Indium trichloride tetrahydrate, Trichloroindigane tetrahydrate

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About This Item

Linear Formula:
InCl3 · 4H2O
CAS Number:
Molecular Weight:
293.24
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

97%

form

solid

reaction suitability

reagent type: catalyst
core: indium

SMILES string

O.O.O.O.Cl[In](Cl)Cl

InChI

1S/3ClH.In.4H2O/h3*1H;;4*1H2/q;;;+3;;;;/p-3

InChI key

UKCIUOYPDVLQFW-UHFFFAOYSA-K

General description

Indium(III) chloride tetrahydrate is a Lewisacid widely used as a catalyst for various organic transformationssuch as Friedel-Crafts acylation and aldolcondensation. It is also used as a precursor to prepare indium-based thin filmsfor solar cells.

Application

Indium(III) chloride tetrahydrate can be used:
  • As a catalyst for the stereoselective synthesis of highly substituted 4-Piperidones via double Mannich reaction.
  • To fabricate In2S3 thin films that act as buffer layers for inverted organic photovoltaic cells.
  • As a precursor to prepare ZnO/CuInS2 nanocomposite with photocatalytic activity.
  • To fabricate Indium tin oxide(ITO) thin films for various applicationssuch as gas sensors, solar cells, and conductive inks.

Pictograms

Corrosion

Signal Word

Danger

Hazard Statements

Hazard Classifications

Skin Corr. 1B

Storage Class Code

8A - Combustible corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Indium oxide thin film sensors for ozone monitoring produced by a sol-gel method
Wan-Young Chung, et al
Journal of Materials Science Letters, 22, 907-909 (2003)
Chi H Nguyen et al.
International journal of toxicology, 39(3), 218-231 (2020-04-02)
The semiconductor manufacturing sector plans to introduce III/V film structures (eg, gallium arsenide (GaAs), indium arsenide (InAs) onto silicon wafers due to their high electron mobility and low power consumption. Aqueous solutions generated during chemical and mechanical planarization of silicon
Double Mannich Reaction and Tandem Cyclization of Imines with Ketones Catalyzed by Indium (III) Chloride Tetrahydrate: Stereoselective Synthesis of Highly Substituted 4-Piperidones
Xiao-Dong Jia, et al.
advanced synthesis and catalysis, 353, 315-319 (2011)
Indium tin oxide nanofiber film electrode for high performance dye sensitized solar cells
Ferry Iskandar, et al.
Japanese Journal of Applied Physics, 49, 010213-010213 (2010)
Synthesis and characterization of ZnO/CuInS2 nanocomposite and investigation of their photocatalytic properties under visible light irradiation
H. Fakhri, et al.
Applied Surface Science, 318, 65-73 (2014)

Articles

Colloidal quantum dots (CQDs) are semiconducting crystals of only a few nanometers (ca. 2–12 nm) coated with ligand/surfactant molecules to help prevent agglomeration.

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