推荐产品
品質等級
產品線
ReagentPlus®
化驗
≥99.5%
形狀
crystals
反應適用性
reagent type: catalyst
core: molybdenum
mp
795 °C (lit.)
正離子痕跡
NH4+: ≤0.02%
SMILES 字串
O=[Mo](=O)=O
InChI
1S/Mo.3O
InChI 密鑰
JKQOBWVOAYFWKG-UHFFFAOYSA-N
正在寻找类似产品? 访问 产品对比指南
應用
LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼，Pr4Mo9018，其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。
法律資訊
ReagentPlus is a registered trademark of Merck KGaA, Darmstadt, Germany
訊號詞
Warning
危險聲明
危險分類
Carc. 2 - Eye Irrit. 2 - STOT SE 3
標靶器官
Respiratory system
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
WGK 1
閃點（°F）
Not applicable
閃點（°C）
Not applicable
其他客户在看
Yu-Zhan Wang et al.
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical
Di-Yan Wang et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3415-3420 (2012-06-08)
A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系技术服务部门