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蒸汽压
1 mmHg ( 487 °C)
方案
99.95%
表单
foil
制造商/商品名称
Goodfellow 662-227-38
电阻率
5.8 μΩ-cm, 20°C
尺寸 × 厚度
150x150 mm × 0.1 mm
沸点
907 °C (lit.)
mp
420 °C (lit.)
密度
7.133 g/mL at 25 °C (lit.)
SMILES字符串
[Zn]
InChI
1S/Zn
InChI key
HCHKCACWOHOZIP-UHFFFAOYSA-N
一般描述
For updated SDS information please visit www.goodfellow.com.
法律信息
Product of Goodfellow
Chenglin Yan et al.
The journal of physical chemistry. B, 110(51), 25850-25855 (2006-12-22)
Vertically aligned ZnO nanorods with uniform diameter and length have been synthesized on a zinc foil substrate with ammonium persulfate as oxidant via a facile, larger scale production and inexpensively synthesized method without any templates or additives. SEM and XRD
A new vapor-phase hydrothermal method to concurrently grow ZnO nanotube and nanorod array films on different sides of a zinc foil substrate.
Haimin Zhang et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 18(17), 5165-5169 (2012-03-21)
Tandra Ghoshal et al.
Journal of nanoscience and nanotechnology, 9(9), 5586-5591 (2009-11-26)
Nanowire arrays of zinc oxide were synthesized on zinc foil by a simple thermal evaporation process. Morphologies and sizes of the synthesized nanostructures were varied by varying the reaction time and the surface roughness of the substrate. Self-catalytic liquid-solid mechanism
J Granell
The Journal of sports medicine and physical fitness, 54(2), 232-237 (2014-02-11)
The role of zinc and copper has been shown essential in the scope of physical exercise. The outcomes of the studies about changes in the concentrations of these elements in blood, in physical effort situations, are sometimes discordant and seem
Hongqin Liu et al.
ACS applied materials & interfaces, 1(9), 2086-2091 (2010-04-02)
Zinc, silicon, and steel superhydrophobic surfaces were prepared by a simple solution-immersion technique. In the case of zinc, the method consists of dipping of the substrate in a prehydrolyzed methanol solution of 1H,1H,2H,2H-(perfluorooctyl)trichlorosilane [CF(3)(CF(2))(5)(CH(2))(2)SiCl(3), PFTS] for 24 h at 50
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