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10 G
$1,980.00
About This Item
线性分子式:
[(CH3)(C2H5)N]4Hf
CAS号:
分子量:
410.90
MDL號碼:
分類程式碼代碼:
12352103
PubChem物質ID:
NACRES:
NA.23
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品質等級
形狀
liquid
反應適用性
core: hafnium
reagent type: catalyst
bp
78 °C/0.01 mmHg (lit.)
mp
<-50 °C
密度
1.324 g/mL at 25 °C (lit.)
儲存溫度
2-8°C
SMILES 字串
CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChI 密鑰
NPEOKFBCHNGLJD-UHFFFAOYSA-N
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一般說明
Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.
應用
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), [1] which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2.[2][3] TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2.[2][3] TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
特點和優勢
This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems.
- Steel cylinder connected to 316 stainless steelball-valve
- 1/4 inch male Swagelok VCR connections
訊號詞
Danger
危險分類
Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
標靶器官
Respiratory system
安全危害
儲存類別代碼
4.3 - Hazardous materials which set free flammable gases upon contact with water
水污染物質分類（WGK）
WGK 3
閃點（°F）
51.8 °F - closed cup
閃點（°C）
11 °C - closed cup
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 199-204 (2002)
Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
商品
Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.
Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
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