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Merck

634867

Sigma-Aldrich

二氧化硅

single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.5 mm

别名:

方石英, 石英, 砂石, 硅石

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5 EA
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About This Item

线性分子式:
SiO2
CAS号:
分子量:
60.08
EC 号:
MDL编号:
UNSPSC代码:
12352303
PubChem化学物质编号:
NACRES:
NA.23

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等级

optical grade

质量水平

方案

99.99% trace metals basis

表单

solid

硬度

7.0 mohs

长度 × 宽度 × 厚度

10 mm × 10 mm × 0.5 mm

折射率

n20/D 1.544 (lit.)

mp

1610 °C (lit.)

转变温度

Tm 573.1 °C (phase change)

密度

2.6 g/mL at 25 °C (lit.)
2.684 g/mL

SMILES字符串

O=[Si]=O

InChI

1S/O2Si/c1-3-2

InChI key

VYPSYNLAJGMNEJ-UHFFFAOYSA-N

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应用

SiO2因其绝佳的热机械性能而作为基质材料用于一系列的应用,包括:
  • 气相沉积[1][2]
  • 相沉积[3]
  • 原子力显微镜探针(AFM)[4]
  • 旋涂[5]
  • 电子设备[6]

特点和优势

应用于无线通信领域的微波滤波器的出色基片。

外形

六角形结晶(a = 4.914 Å, c = 5.405 Å)

其他说明

比热 = 0.18 cal/g;热电常数 = 1200μV/°C @ 300 °C;热导率 = 0.0033 cal/cm°C;热膨胀 (x10-6) = α;11: 13.71, α33: 7.48;Q值 = 1.8 × 106 min;音速,SAW = 3160 m/sec; 频率常数,BAW = 1661 kHz/mm;压电耦合 = K2 BAW: 0.65%, SAW: 0.14%

储存分类代码

13 - Non Combustible Solids

WGK

nwg

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Exciton diffusion measurements in poly (3-hexylthiophene).
Shaw PE, et al.
Advanced Materials, 20(18), 3516-3520 (2008)
The effect of calcination temperature on the surface microstructure and photocatalytic activity of TiO2 thin films prepared by liquid phase deposition.
Yu J, et al.
The Journal of Physical Chemistry B, 107(50), 13871-13879 (2003)
Electrical and optical properties of ZnO transparent conducting films by the sol-gel method.
Lee J, et al.
Journal of Crystal Growth, 247(1-2), 119-125 (2003)
Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.
Chen J, et al.
Journal of the American Chemical Society, 133(44), 17548-17551 (2011)
Measurement of the adhesion force between carbon nanotubes and a silicon dioxide substrate.
Whittaker JD, et al.
Nano Letters, 6(5), 953-957 (2006)

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