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10 G
$408.00
50 G
$1,390.00
About This Item
线性分子式:
GaN
CAS号:
分子量:
83.73
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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质量水平
方案
99.9% trace metals basis
表单
powder
mp
800 °C (lit.)
SMILES字符串
N#[Ga]
InChI
1S/Ga.N
InChI key
JMASRVWKEDWRBT-UHFFFAOYSA-N
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警示用语：
Warning
危险声明
危险分类
Skin Sens. 1
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Faceshields, Gloves, type N95 (US)
历史批次信息供参考:
分析证书(COA)
Lot/Batch Number
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
Kim H, et al.
Nano Letters, 4(6), 1059-1062 (2004)
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
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