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Merck

424838

Sigma-Aldrich

三苯基氢化锗

别名:

三苯基锗, 三苯基锗基氢化物

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5 G
$349.00

$349.00


预计发货时间2025年4月21日详情


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5 G
$349.00

About This Item

线性分子式:
(C6H5)3GeH
CAS号:
分子量:
304.96
EC 号:
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23

$349.00


预计发货时间2025年4月21日详情


获取大包装报价

质量水平

表单

powder or crystals
solid

反应适用性

core: germanium
reagent type: reductant

mp

40-43 °C (lit.)

SMILES字符串

c1ccc(cc1)[GeH](c2ccccc2)c3ccccc3

InChI

1S/C18H16Ge/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18/h1-15,19H

InChI key

NXHORDQDUDIXOS-UHFFFAOYSA-N

一般描述

三苯基氢化锗是氢供体。[1]

应用

它可用于(Z)烯烃的异构化。[1]1 TEMPO(2,2,6,6-四甲基哌啶基氧基)与三苯基氢化锗反应形成其相应的三氢锗基自由基。2

包装

玻璃瓶封装

象形图

Exclamation mark

警示用语:

Warning

危险声明

危险分类

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves


历史批次信息供参考:

分析证书(COA)

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Palladium (II)-catalyzed isomerization of olefins with tributyltin hydride.
Kim IS, et al.
The Journal of Organic Chemistry, 73(14), 5424-5426 (2007)
Theresia Ahrens et al.
Dalton transactions (Cambridge, England : 2003), 45(11), 4716-4728 (2016-02-11)
The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl complex [Rh(GePh3)(PEt3)3] (3). Alternatively, treatment of the methyl complex [Rh(CH3)(PEt3)3] (4) with HGePh3 furnished
Vanessa A Béland et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 26(56), 12751-12757 (2020-04-16)
The development of batteries and fuel cells has brought to light a need for carbon anode materials doped homogeneously with electrocatalytic metals. In particular, combinations of electrocatalysts in carbon have shown promising activity. A method to derive functional carbon materials
E Mullane et al.
Physical chemistry chemical physics : PCCP, 17(10), 6919-6924 (2015-02-14)
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point
Grace Flynn et al.
Nano letters, 16(1), 374-380 (2015-12-18)
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent

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