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蒸汽密度
3.5 (vs air)
蒸汽壓力
1254 mmHg ( 20 °C)
描述
film resistivity > 50 Ω-cm
化驗
≥99.99% trace metals basis
自燃溫度
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES 字串
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI 密鑰
MROCJMGDEKINLD-UHFFFAOYSA-N
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一般說明
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
應用
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
訊號詞
Danger
危險分類
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
安全危害
儲存類別代碼
2A - Gases
水污染物質分類（WGK）
WGK 1
閃點（°F）
-34.6 °F
閃點（°C）
-37 °C
個人防護裝備
Faceshields, Gloves, Goggles, multi-purpose combination respirator cartridge (US)
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
Dichlorosilane-derived nano-silicon inside hollow carbon spheres as a high-performance anode for Li-ion batteries.
Jaumann T, et al.
Journal of Material Chemistry C, 5(19), 9262-9271 (2017)
Soujanya N Jampala et al.
Journal of agricultural and food chemistry, 53(9), 3618-3625 (2005-04-28)
The structure and rheological properties of xanthan gum (XG) modified in a cold plasma environment were investigated. XG was functionalized in a capacitively coupled 13.56-MHz radio frequency dichlorosilane (DS)-plasma conditions and, consecutively, in situ aminated by ethylenediamine. The surface structure
Lu Xie et al.
Nanomaterials (Basel, Switzerland), 10(9) (2020-09-03)
With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short
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