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蒸汽密度
>1 (vs air)
质量水平
方案
97%
折射率
n20/D 1.430 (lit.)
沸点
92 °C (lit.)
密度
1.08 g/mL at 25 °C (lit.)
储存温度
2-8°C
SMILES字符串
C[Si](Cl)(Cl)C=C
InChI
1S/C3H6Cl2Si/c1-3-6(2,4)5/h3H,1H2,2H3
InChI key
YLJJAVFOBDSYAN-UHFFFAOYSA-N
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一般描述
Dichloromethylvinylsilane reacts with dimethylsulphide borane to form organosilylborane, which further gets ammonolysized to form the polymer of the SiBCN[1].
应用
Dichloromethylvinylsilane was used as single molecular precursor for the deposition of β-SiC thin films and β -SiC nanowires by metalorganic chemical vapor deposition on bare Si 100 and Ni-coated Si 100 substrates[2]. Dichloromethylvinylsilane was used in the synthesis and characterization of Tris(1-(dichloro(methyl)silyl)ethyl)borane,monomer[3].
警示用语：
Danger
危险分类
Acute Tox. 3 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2 - Skin Corr. 1B
补充剂危害
储存分类代码
3 - Flammable liquids
WGK
WGK 1
闪点(°F)
38.1 °F - closed cup
闪点(°C)
3.4 °C - closed cup
个人防护装备
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
其他客户在看
Synthesis and Structure Characterization of Amorphous SiBCN Ceramic Precursors.
Yajing L and Yue Z.
Rare Metals Materials and Engineering, 40, 234-237 (2011)
Influence of the Precursor Cross-Linking Route on the Thermal Stability of Si- B- C- O Ceramics.
Ischenko V, et al.
Chemistry of Materials, 20(22), 7148-7156 (2008)
Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane.
Kang B-C, et al.
J. Vac. Sci. Technol. B, 23(4), 1722-1725 (2005)
H Yamakita et al.
Radioisotopes, 33(8), 513-518 (1984-08-01)
Poly(methylvinylsiloxane)-bonded silica gel was synthesized by condensation reaction between silica gel and the hydrolysis product of methylvinyldichlorosilane. Graft polymerization of styrene or indene onto poly(methylvinylsiloxane)-bonded silica gel was carried out by gamma-ray irradiation and compared with that onto silica gel.
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