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Poly-[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophen]
99.9%
Synonym(e):
F8T2, Poly-(9,9-dioctylfluoren-alt-bithiophen), Poly-[[2,2′-bithiophen]-5,5′-diyl-(9,9-dioctyl-9H-fluoren-2,7-diyl)]
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About This Item
Empfohlene Produkte
Qualitätsniveau
Assay
99.9%
Form
powder
Mol-Gew.
average Mn >20,000
Fluoreszenz
λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)
Halbleitereigenschaften
P-type (mobility=5×10−3 cm2/V·s)
Verwandte Kategorien
Allgemeine Beschreibung
F8T2 is a fluorenated semiconducting polymer which can be used as a hole transporting layer with mobility of 0.02cm2V-1s-1. It is highly stable in vacuum and UV based environment. Its liquid crystallinity allows it to form a self-ordered nanostructure on organic thin films.
Typically soluble in THF, Dichloromethane, or Tolune. (c = 1%, typical appearance may be clear to turbid).
Polymer is end-capped with 3,5-dimethylbenzene.
Polymer is end-capped with 3,5-dimethylbenzene.
Anwendung
F8T2 can be majorly used in the fabrication of active layers for optoelectronics and energy based devices such as organic field effect transistors(OFETs), solar cells, light emitting diodes(LEDs) and electronic gas sensors.
Lagerklassenschlüssel
11 - Combustible Solids
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
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Accelerating gas adsorption on 3D percolating carbon nanotubes.
Scientific Reports, 6(13), 21313-21313 (2016)
Organic/inorganic F8T2/GaN light emitting heterojunction.
Organic Electronics, 49(3), 64-68 (2017)
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
Applied Physics Letters, 87, 153511-153511 (2005)
Preparation of active layer of solar cells device by F8T2 blending with PCBM
CPMT Symposium Japan, 2010 IEEE, 3(13), 1-4 (2010)
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