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264091
Indium
rod, diam. 6 mm, ≥99.999% trace metals basis
Synonym(e):
Indium element
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About This Item
Empirische Formel (Hill-System):
In
CAS-Nummer:
Molekulargewicht:
114.82
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12141719
PubChem Substanz-ID:
NACRES:
NA.23
Empfohlene Produkte
Dampfdruck
<0.01 mmHg ( 25 °C)
Qualitätsniveau
Assay
≥99.999% trace metals basis
Form
rod
Widerstandsfähigkeit
8.37 μΩ-cm
Durchmesser
6 mm
mp (Schmelzpunkt)
156.6 °C (lit.)
Dichte
7.3 g/mL at 25 °C (lit.)
SMILES String
[In]
InChI
1S/In
InChIKey
APFVFJFRJDLVQX-UHFFFAOYSA-N
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Verwandte Kategorien
Menge
20 g = 100 mm
Lagerklassenschlüssel
13 - Non Combustible Solids
WGK
WGK 3
Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Persönliche Schutzausrüstung
dust mask type N95 (US), Eyeshields, Gloves
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Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
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