The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.
647675
Silicon
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
동의어(들):
Silicon element
로그인조직 및 계약 가격 보기
모든 사진(1)
크기 선택
보기 변경
1 SET
₩197,418
5 EA
₩625,951
About This Item
Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
MDL number:
UNSPSC 코드:
12352300
PubChem Substance ID:
NACRES:
NA.23
추천 제품
양식
crystalline (cubic (a = 5.4037))
wafer (single side polished)
포함
boron as dopant
직경 × 두께
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
반도체 특성
<100>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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애플리케이션
포장
1EA refers to 1 wafer and 5EA refers to 5 wafers
물리적 특성
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Storage Class Code
13 - Non Combustible Solids
WGK
nwg
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
Eyeshields, Gloves, type N95 (US)
이미 열람한 고객
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
문서
Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.
프로토콜
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
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