모든 사진(1)
About This Item
Linear Formula:
GaP
CAS Number:
Molecular Weight:
100.70
EC Number:
MDL number:
UNSPSC 코드:
12352300
PubChem Substance ID:
NACRES:
NA.23
분석
99.99% trace metals basis
양식
chunks
SMILES string
[P]#[Ga]
InChI
1S/Ga.P
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
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신호어
Warning
유해 및 위험 성명서
Hazard Classifications
Eye Irrit. 2 - STOT SE 3
표적 기관
Respiratory system
Storage Class Code
11 - Combustible Solids
WGK
WGK 2
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
개인 보호 장비
dust mask type N95 (US), Eyeshields, Gloves
가장 최신 버전 중 하나를 선택하세요:
A Fakhr et al.
Nanotechnology, 21(16), 165601-165601 (2010-03-30)
InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and stacking fault density was studied with respect to group III and V impingement rate and size
Marcel A Verheijen et al.
Nano letters, 7(10), 3051-3055 (2007-09-25)
We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be
Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
Maik Behrendt et al.
Nanomedicine (London, England), 4(7), 747-761 (2009-10-21)
To assess the effects of oleic acid treatment on subcellular distribution of indium gallium phosphide-zinc sulfide (InGaP/ZnS) nanoparticles in microglia and astrocytes. The extent of colocalization between the nanoparticles and organelles was assessed by confocal microscopy, spectrofluorometry and cell sorting.
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
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