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Merck
모든 사진(3)

주요 문서

401080

Sigma-Aldrich

Bismuth(III) selenide

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동의어(들):

Bismuth selenide

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About This Item

실험식(Hill 표기법):
Bi2Se3
CAS Number:
Molecular Weight:
654.84
EC Number:
MDL number:
UNSPSC 코드:
12352300
PubChem Substance ID:
NACRES:
NA.23

양식

solid

환경친화적 대안 제품 특성

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density

6.82 g/mL at 25 °C (lit.)

환경친화적 대안 카테고리

SMILES string

[Se]=[Bi][Se][Bi]=[Se]

InChI

1S/2Bi.3Se

InChI key

OMEPJWROJCQMMU-UHFFFAOYSA-N

일반 설명

Bismuth(III) selenide (Bi2Se3) is a semiconducting thermoelectric material with a narrow band gap. It forms thin films by different techniques, which include solution growth, electrodeposition and molecular jet method. It acts as a topological insulator based saturable absorber.[1][2][3]
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애플리케이션

Bi2Se3 is a metal selenide, which can be used for a variety of applications such as solar cells, light emitting diodes (LEDs), and superionic conductor. Its optical properties include a high absorption coefficient larger than 104 cm-1 and a band gap of 0.35 eV.[4]

픽토그램

Skull and crossbonesHealth hazardEnvironment

신호어

Danger

유해 및 위험 성명서

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 2

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

dust mask type N95 (US), Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges


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시험 성적서(COA)

Lot/Batch Number

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이 제품을 이미 가지고 계십니까?

문서 라이브러리에서 최근에 구매한 제품에 대한 문서를 찾아보세요.

문서 라이브러리 방문

Chemical deposition and characterization of glassy bismuth (III) selenide thin films
Pejova B and Grozdanov I
Thin Solid Films, 408(1-2), 6-10 (2002)
Q-switched ytterbium-doped fiber laser with topological insulator-based saturable absorber
Al-Masoodi AHH, et al.
Optical Engineering, 56(5), 056103-056103 (2017)
Electrodeposition and characterization of copper bismuth selenide semiconductor thin films
Li J, et al.
Electrochimica Acta, 87(1-2), 153-157 (2013)
Optical and thermal band gap energy of chemically deposited bismuth (III) selenide thin films
Pejova B, et al.
Materials Chemistry and Physics, 83(2-3), 245-249 (2004)

문서

Thermoelectric materials comprise a wide range of solid compounds distinguished by their ability to convert thermal and electrical energy.

Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.

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